Diffusion Bonding: Influence of Process Parameters and …
Diffusion welding OF copper. T = 850°C, t = 4 h, p = 2 MPa, micro-structured stack: 18.2%, overall: 4.2%. Especially in thin-walled micro-structures, perfect grain growth across the bonding planes can be seen. However, in the massive border area, pores remain and grain growth is not as pronounced.